SURFACE CONTAMINATION METROLOGY
Elemental contamination can be measured at single sites or using whole wafer maps.
Cleaning, litho, etch, ashing, films, and other fab operations can all be contaminated using TXRF analysis. With a single-target, 3-beam X-ray system and a liquid nitrogen-free detecting system, the TXRF 3760 can measure elements from Na to U.
Rigaku’s proprietary XY sample stage technology, an in-vacuum wafer robotic transfer system, and new user-friendly windows software are all included in the TXRF 3760. All of these factors lead to increased throughput, precision, and ease of everyday operation.
Sweeping TXRF software, which is available as an option, allows for mapping of contamination distribution throughout the wafer surface to find “hot spots” that can be automatically re-measured with greater precision. The optional ZEE-TXRF feature overcomes the original TXRF’s 15 mm edge exclusion, allowing measurements to be taken with zero edge exclusion.
|Product name||TXRF 3760|
|Technique||Total reflection X-ray fluorescence (TXRF)|
|Benefit||Rapid elemental analysis, of Na to U, to gauge wafer contamination in all fab processes|
|Technology||3-beam TXRF system with liquid nitrogen-free detector|
|Core attributes||Up to 200 mm wafers, XYθ sample stage system, in-vacuum wafer robotic transfer system, ECS/GEM communication software|
|Core options||Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify “hot spots.” ZEE-TXRF capability enabling measurements to be made with zero edge exclusion|
|Computer||Internal PC, MS Windows® OS|
|Core dimensions||1000 (W) x 1760 (H) x 948 (D) mm|
|Mass||100 kg (core unit)|
|Power requirements||3Ø, 200 VAC 50/60 Hz, 100 A|