SURFACE CONTAMINATION METROLOGY
Elemental contamination can be measured at single sites or using whole wafer maps.
- Ease of operation and rapid analysis results
- Accepts 200 mm and smaller wafers
- Compact design, footprint
- High-power rotating-anode source
- Wide range of analytical elements (Na~U)
- Light-element sensitivity (for Na, Mg, and Al)
- Application to bare Si and to non-Si substrates
- Import measurement coordinates from defect inspection tools for follow-up analysis
Cleaning, litho, etch, ashing, films, and other fab operations can all be contaminated using TXRF analysis. With a single-target, 3-beam X-ray system and a liquid nitrogen-free detecting system, the TXRF 3760 can measure elements from Na to U.
Rigaku’s proprietary XY sample stage technology, an in-vacuum wafer robotic transfer system, and new user-friendly windows software are all included in the TXRF 3760. All of these factors lead to increased throughput, precision, and ease of everyday operation.
Sweeping TXRF software, which is available as an option, allows for mapping of contamination distribution throughout the wafer surface to find “hot spots” that can be automatically re-measured with greater precision. The optional ZEE-TXRF feature overcomes the original TXRF’s 15 mm edge exclusion, allowing measurements to be taken with zero edge exclusion.
|Total reflection X-ray fluorescence (TXRF)
|Rapid elemental analysis, of Na to U, to gauge wafer contamination in all fab processes
|3-beam TXRF system with liquid nitrogen-free detector
|Up to 200 mm wafers, XYθ sample stage system, in-vacuum wafer robotic transfer system, ECS/GEM communication software
|Sweeping TXRF software enables mapping of the contaminant distribution over the wafer surface to identify “hot spots.” ZEE-TXRF capability enabling measurements to be made with zero edge exclusion
|Internal PC, MS Windows® OS
|1000 (W) x 1760 (H) x 948 (D) mm
|100 kg (core unit)
|3Ø, 200 VAC 50/60 Hz, 100 A